Semiconductor device

ABSTRACT

ON resistance and leakage current of a vertical power MOSFET are to be diminished. In a vertical high breakdown voltage MOSFET with unit MOSFETs (cells) arranged longitudinally and transversely over a main surface of a semiconductor substrate, the cells are made quadrangular in shape, and in each of the cells, source regions whose inner end portions are exposed to the interior of a quadrangular source contact hole are arranged separately and correspondingly to each side of the quadrangle. Each source region is trapezoidal in shape, and a lower side of the trapezoid is positioned below a gate electrode (gate insulating film), while an upper side portion of the trapezoid is exposed to the interior of the source contact hole. The four source regions are separated from one another by diagonal regions of the quadrangle.

BACKGROUND OF THE INVENTION

The present invention relates to a technique applicable effectively to asemiconductor device, e.g., a vertical high breakdown voltage MOSFET(Metal Oxide Semiconductor Field Effect Transistor) which permits ONresistance to be made small and permits reduction of a device area.

A vertical high breakdown voltage MOSFET, i.e., a power MOSFET, hasvarious characteristics such as being superior in frequencycharacteristic, high in switching speed and capable of being driven at alow power. For this reason the MOSFET in question is used in variousindustrial fields.

For increasing output, the power MOSFET adopts a structure wherein alarge number of unit MOSFETs (cells) are arrayed over a main surface ofa semiconductor substrate. Examples of cell shapes include quadrangular,hexagonal, and circular shapes. In the case of circular or hexagonalcells, there is adopted a so-called triangular array in which threeadjacent cells are centered respectively on vertices of a triangle. Inthe case of quadrangular cells, there is adopted a so-calledquadrangular array in which four adjacent cells are centeredrespectively on vertices of a quadrangle. Also in the case ofquadrangular cells it is possible to adopt a triangular array.

In the case of circular or hexagonal cells arranged in a triangulararray, if depletion layers are created by increasing voltage gradually,the potential relaxed by the depletion layers at the center of thetriangle in the triangular array becomes higher than the potentialrelated by depletion layers at the center of a quadrangle in aquadrangular array, with consequent occurrence of avalanche breakdown,so that the breakdown voltage cannot be set large in comparison with thequadrangular array. In the present situation, a maximum breakdownvoltage of 1500V or so is possible in the case of quadrangular cells ina quadrangular array, but in the case of circular cells in a triangulararray, an upper limit is 200V, and in the case of hexagonal cells in atriangular array, an upper limit is 600V or so.

In each unit MOSFET, a source contact hole is quadrangular, hexagonal,or circular in shape, and a source region is formed along a peripheraledge of the source contact hole and inside and outside the hole.Therefore, a planar pattern of the source region is a quadrangular framepattern in the case of a quadrangular cell, is a hexagonal frame patternin the case of a hexagonal cell, or is a ring-like pattern in the caseof a circular cell.

In forming base and source regions, diffusion is performed using a gateelectrode-including portion as a mask for impurity diffusion todetermine the depth (spreading length in the planar direction) of thebase region and that of the source region. In the case of a quadrangularcell, the spread of impurity at each corner portion becomes radial, sothat the impurity concentration at each corner becomes lower than thatin impurity diffusion at each side of a quadrangle and hence thethreshold voltage becomes lower. Consequently, in the case where a steepcurrent is applied, there occurs a current concentration to a portionwhere the threshold voltage is low, with eventual breakage of thedevice. For avoiding this inconvenience there has been proposed astructure in which a source region is not disposed at each corner. Thatis, there is adopted a rectangular or convex shape wherein a sourceregion is allowed to cross each side of a quadrangle (see, for example,Patent Literatures 1 and 2).

[Patent Literature 1]

Japanese Unexamined Patent Publication No. Sho 63 (1988)-289871 (page 3,FIGS. 1, 2 and 4)

[Patent Literature 2]

U.S. Pat. No. 4,641,162 (column 6, FIG. 4)

SUMMARY OF THE INVENTION

In a semiconductor device structure having a pn junction such-as a powerMOSFET, there occurs leakage current due to for example a defect in thebulk or surface, but if the level of the leakage current is bad, theremay be an increase of loss in a mounted state for use, or as the casemay be, a breakdown potential increases due to concentration of anelectric current in a defective portion. Also in the device itself, notonly its quality but also the yield thereof is deteriorated with anincrease of the leakage current level, thus causing an increase of cost.Thus, it is necessary to make a design so as to minimize the leakagecurrent.

A main cause of leakage current is a defect in the manufacturing stagesuch as a defect in the bulk or surface, but as design-related factorsof leakage current there are such parameters as channel length andimpurity concentration of a channel portion. From the standpoint of arelation of the channel length and impurity concentration to leakagecurrent, the easier the inversion of channel surface into a reverseconductive type, the easier the flow of current, so by making thechannel length larger or by making the impurity concentration higher,the inversion of the channel surface becomes difficult, thus permittinga decrease of leakage current. But this method gives rise to the problemthat ON resistance increases to a great extent, resulting indeterioration of the device performance.

As to designing the channel portion, an impurity concentration of thechannel portion is determined by setting a threshold value of thedevice, and the channel length is restricted by for example a voltageproof design for the prevention of a punch-through phenomenon.Therefore, for decreasing leakage current in the situation where targetthreshold value and breakdown voltage value are set, it is necessarythat the channel length be made larger by prolonging the diffusion timeof impurity. However, if the channel length is made larger, the unitcell size of MOSFET becomes larger and ON resistance increases althoughleakage current is decreased.

FIG. 11 is a schematic diagram showing a state of impurity diffusion atthe time of forming a source region in a quadrangular cell.

A mask 51 is formed on a P type base region 50 in a surface layer of anN type semiconductor substrate, and an N⁺ type source region 53 isformed by diffusing impurity in a quadrangular opening 52. In this case,at side portions of the quadrangle the impurity is diffused uniformly,but at corner portions the impurity is diffused radially. Arrowsrepresent schematically diffusing directions and quantities of theimpurity. The region where arrows are described at constant pitchesindicates that the impurity is diffused uniformly, while the radialportion indicates that the impurity is dispersed.

Thus, at corner portions of the quadrangular opening 52 the impurity isradially dispersed and diffused, so that the impurity concentration ateach corner portion becomes lower than that at each side portion, andthe impurity diffusion length becomes shorter. Such a lowering of theimpurity concentration results in easier inversion of the channelsurface and easier occurrence of leakage current. The occurrence ofleakage current causes a power loss.

The above is also true of forming the base region prior to forming thesource region. At each corner portion of the base region the impurityconcentration is lower than in each side portion and the diffusionlength practically becomes shorter than in each side portion. Subsequentformation of the source region results in the channel length becomingshorter and easier occurrence of leakage current.

In Patent Literatures 1 and 2 a source region is formed independently ateach side portion of a quadrangle and its pattern is merely maderectangular. This results in that the channel width becomes much shorterand ON resistance increases in comparison with the case where a sourceregion is formed as a quadrangular frame pattern.

It is an object of the present invention to provide a semiconductordevice having a vertical high breakdown voltage MOSFET (insulated gatefield effect transistor) which permits a decrease of ON resistance.

It is another object of the present invention to provide a semiconductordevice having a vertical high breakdown voltage MOSFET which permits adecrease of leakage current and a decrease of ON resistance.

It is a further object of the present invention to provide asemiconductor device having a small-sized, vertical high breakdownvoltage MOSFET which permits a decrease of leakage current and adecrease of ON resistance.

The above and other objects and novel features of the present inventionwill become apparent from the following description and the accompanyingdrawings.

A typical mode of the invention disclosed herein will be outlined below.

(1) A semiconductor device having a plurality of polygonal(quadrangular) unit MOSFETs (cells) connected in parallel over a mainsurface of a semiconductor substrate, the semiconductor devicecomprising:

-   -   the semiconductor substrate (silicon substrate) of a first        conductive type (N type) serving as a drain;    -   a MOS gate comprising a gate insulating film (SiO₂ film) formed        selectively over the main surface of the semiconductor        substrate, a gate electrode (polysilicon film) formed over the        gate insulating film, and an insulating film (SiO₂ film/PSG        film) which covers the gate electrode and the gate insulating        film;    -   a source contact hole formed in a region not being covered with        the insulating film, of the main surface of the semiconductor        substrate;    -   a base region of a second conductive type (P type) formed over        the main surface of the semiconductor substrate, superimposed        over the source contact hole and extending to below the MOS        gate;    -   a source region of a first conductive type (N⁺ type) formed over        the main surface of the semiconductor substrate, extending to        below the MOS gate from an inside portion of the source contact        hole and forming a channel between it and an outer peripheral        edge of the base region; and    -   a source electrode formed on the source contact hole and the MOS        gate and connected-electrically to the source region and the        base region,    -   wherein the gate insulating film, the gate electrode and the        insulating film are of a mesh structure for forming the cells        over the main surface of the semiconductor substrate, and the        regions where the gate insulating film, the gate electrode and        the insulating film are not formed are polygonal in shape, the        polygons being arranged in a quadrangular array such that        centers of four adjacent polygons arranged in order        longitudinally and transversely over the main surface of the        semiconductor substrate are positioned respectively at vertices        of a quadrangle,    -   the source region is not present below the gate electrode at        each corner of each said polygon, the source region is offset a        predetermined distance from the gate electrode, and    -   in the source region extending along each side of each said        polygon:    -   the width b of the source region extending over both inside and        outside of a side of the source contact hole is longer than the        width a of an inner end of the source region exposed to the        source contact hole and extending along the said side of the        contact hole,    -   the width c of an outer end of the source region which confronts        the gate electrode is longer than the width a of the inner end        of the source region, and    -   the width c of the outer end of the source region is longer than        the width b of the source region.

The source region is separated by diagonal regions (isolation spacing 1to 3 μm) of the quadrangle and each of the thus isolated source regionsis trapezoidal in shape. Further, centrally of the base region is formeda well region having an impurity concentration higher than that of thebase region and having a bottom deeper than that of the base region.

According to the above means (1):

-   -   (a) In each of the quartered trapezoidal source regions, the        width c of an outer end of the source region which outer end        corresponds to a base of the trapezoid is close to the gate        electrode, while the width a of an inner end of the source        region which inner end corresponds to an upper side of the        trapezoid is exposed into the source contact hole, and thus the        source region assumes a divergent shape in the flowing direction        of drain current, so that the flow of drain current becomes        smooth and ON resistance is decreased. That is, the source        region is formed as a pattern wherein the width b of the source        region is longer than the width a of the inner end of the source        region, and the width c of the outer end of the source region is        longer than the width b of the source region. Besides, since the        isolation spacing between adjacent source regions is as narrow        as 0.3 to 0.4 μm, the width of each source region can be set to        a maximum value and ON resistance can be made small.    -   (b) Since there is adopted a structure wherein at each corner        portion of the quadrangular cell the source region is not        extended to below the gate electrode (gate insulating film), it        follows that the source region is not formed in the short        channel portion at each cell corner, so that the channel length        practically becomes larger and leakage current is diminished.    -   (c) With the above (a) and (b), it is possible to provide a        vertical high breakdown voltage MOSFET which permits a decrease        of leakage current and of power loss. Further, yield is improved        in manufacture by decrease of the leakage current, whereby it is        possible to provide a high-quality product at low cost.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view showing a unit MOSFET (cell) portion ofa vertical power MOSFET in a semiconductor element according to anembodiment (first embodiment) of the present invention;

FIG. 2 is a schematic sectional view showing the cell portion;

FIG. 3 is a schematic plan view showing a partial pattern of a sourceregion in the cell portion;

FIG. 4 is a plan view a semiconductor device with the semiconductordevice of the first embodiment built therein;

FIG. 5 is a schematic plan view of the semiconductor device of the firstembodiment;

FIG. 6 is a schematic partial plan view showing a state of cell array inthe semiconductor device of the first embodiment;

FIG. 7 is a schematic sectional view showing parasitic resistances ofvarious portions in the semiconductor device;

FIG. 8 is a graph showing a correlation between leakage current ofMOSFET and frequency thereof in the semiconductor device of the firstembodiment;

FIG. 9 is a schematic plan view showing a vertical power MOSFET portionaccording to another embodiment (second embodiment) of the presentinvention;

FIG. 10 is a sectional view taken along lines A-A′ and B-B′ in FIG. 9;and

FIG. 11 is a schematic diagram showing a state of impurity diffusion ata corner portion below a mask which has a quadrangular opening.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will be described in detailhereinunder with reference to the accompanying drawings. In all of thedrawings for illustrating the embodiments, components having the samefunctions are identified by the same reference numerals, and repeatedexplanations thereof will be omitted.

First Embodiment

FIG. 5 is a schematic plan view of a semiconductor device (semiconductorchip) with a vertical insulated gate field effect transistor (verticalhigh breakdown voltage MOSFET) built therein according to an embodiment(first embodiment) of the present invention. As shown in FIG. 5, asemiconductor device 1 is of a flat structure having, for example, alength of 4.0 mm, a width of 4.0 mm and a thickness of 0.4 mm. The wholeof an upper surface of the semiconductor device 1 serves as a MOS unitcell area 2, in which there are formed a gate pad (gate bonding area) 3as an external electrode terminal and a source pad (source bonding area)4. A field limiting area spreads outside the MOS unit cell area 2. Aback side of the semiconductor device 1 serves as a drain electrode.

FIG. 6 is a schematic plan view showing the MOS unit cell area 2partially. As shown in the same figure, unit MOSFETs (cells) 5 arearranged in order longitudinally and transversely. In the presentinvention the cells 5 are each formed in a polygonal shape. In thisfirst embodiment a description will be given below of the case where thecells 5 are quadrangular.

Four adjacent cells 5 are arranged in a quadrangular shape in whichcenters of the cells 5 are positioned respectively at vertices of aquadrangle, which is a square in this embodiment. In this quadrangulararray, the potential at a central part of the quadrangle in thequadrangular array based on depletion layers in the four adjacent cellsis related by the depletion layers earlier than in a triangular array,so that there no longer occurs such an avalanche breakdown as in thetriangular array and hence it is possible to set a breakdown voltagevalue as high as 1500V or so. It is also possible to freely select thebreakdown voltage value in the range of 40 to 1500V in the design stage.

The semiconductor device 1 constructed as above is incorporated intosuch a sealing member (package) 12 as shown in FIG. 4 to provide asemiconductor device 11. The semiconductor device 11 is made up thesealing member (package) 12 which in appearance is formed in a flatrectangular shape using an insulating resin, a header 13 projecting fromone end of the sealing member 12, and three leads 14 projecting from anopposite end side of the sealing member 12. A lower surface (back side)of the header 13 is exposed to the back side of the sealing member 12,and a mounting hole 15 for use in mounting the semiconductor device 11is formed in the header 13 projecting from the sealing member 12.

A part of the header 13 is buried in the sealing member 12, and the lead14 located centrally is integral with the header 13, while the leads 14located on both sides are separated from the header 13. For example, theleft, center, and right leads 14 serve as gate (G), drain (D), andsource (S), respectively. Within the sealing member 12, thesemiconductor device 1 is fixed to an upper surface of the header 13through the drain electrode. The gate pad 3 over the upper surface ofthe semiconductor device 1 and a tip portion of the left lead 14 servingas a gate are connected together through an electrically conductive wire16. Likewise, the source pad 4 and a tip portion of the right lead 14serving as a source are connected together through an electricallyconductive wire 16.

The following description is now provided about the structure of eachunit MOSFET (cell) 5 of the vertical high breakdown voltage MOSFET(vertical power MOSFET). FIG. 1 is a plan view of a cell portion, FIG. 2is a sectional view of the cell portion, and FIG. 3 is a schematic planview of the cell portion.

As shown in FIG. 2, the cell 5 is formed over a main surface (uppersurface) of a semiconductor substrate 20 made of N⁺ type (firstconductive type) silicon with an impurity concentration of about 10²¹cm⁻³ and a thickness of about 400 μm. More specifically, over the mainsurface of the semiconductor substrate 20 is formed an N⁻ type (secondconductive type) epitaxial layer 21 with an impurity concentration ofabout 10¹⁴ cm⁻³ and a thickness of about 40 μm, and in a surface layerportion of the epitaxial layer 21 is formed a P type base region(channel-forming region) with an impurity concentration of about 10¹⁷cm⁻³ and a thickness of 3 μm. As indicated with a dotted line in FIG. 1,the base region 22 is generally square in plan and such base regions 22are regularly provided longitudinally and transversely over the mainsurface of the semiconductor substrate 20. Centrally of the base region22 is formed a P⁺ type well region 23 with an impurity concentration ofabout 1×10¹⁸ cm⁻³. The well region 23 is formed at a depth of 5 to 7 μmfrom the surface of the semiconductor substrate.

Further, as shown in FIG. 1, inside a surface layer portion of the baseregion 22 are formed quartered, trapezoidal, N⁺ type source regions 24.The source regions 24 each have an impurity concentration of about 10²⁰cm⁻³ and a thickness of about 1 μm. Generally, in the case of aquadrangular cell, a source region is formed in the shape of aquadrangular frame. But in this first embodiment source regions areformed along diagonal lines of a quadrangle by a method wherein a maskis formed using a fine photoresist to prevent the diffusion of impurity.In this way there are formed trapezoidal source regions. Besides, sincediffusion is performed at a mask width of 2 to 4 μm or so, an isolationspacing between adjacent source regions becomes 1 to 3 μm or so. Withthis width, corner portions of the quadrangle where the impurityconcentration is non-uniform are not included in the source regions. Inother words, the source regions 24 can be widened up to the vicinitiesof the corner portions of the quadrangle where the impurityconcentration is not uniform, thus permitting a decrease of ONresistance.

The base region 22 and the well region 23 are formed by doublediffusion. The surface layer portion of the base region 22 locatedbetween an outer periphery edge of each source region 24 and that of thebase region 22 serves as a channel 25. The channel 25 is formedself-alignmentwise by a difference in the double diffusion. Theepitaxial layer 21 deviated from the base region 22 and the well region23, as well as the semiconductor substrate 20, constitute a drainregion. A surface layer portion of the drain region, i.e., the portionbetween adjacent base regions 22, constitute a JFET portion 26.

On the other hand, a gate insulating film 27 having a thickness of about50 to 130 nm is formed on all of the JFET portion 26, channel 25 andsource region 24 close to the channel. Further, over the gate insulatingfilm 27 is formed a gate electrode 28 using polysilicon (electricresistance: 20 to 30 Ω/□) at a thickness of about 300 to 500 nm. Thegate insulating film 27 is formed using SiO₂ film.

The gate insulating film 27 and the gate electrode 28 are registered andoverlap each other. The length of the source region 24 with the gateinsulating film 27 superimposed thereon corresponds to the diffusiondepth, for example, 0.5 μm or so, because the impurity diffusion maskfor the source region 24 corresponds to the gate insulating film 27 andthe gate electrode 28.

Further, an insulating film 30 is formed over the main surface side ofthe semiconductor substrate 20 exclusive of the quadrangular regionwhich includes the center of the base region 22 and the inside portionof the source region 24 and which is analogous to the cell shape. Forexample, the insulating film 30 comprises SiO₂ film as a lower layer andPSG film (phosphosilicate glass film) which overlies the SiO₂ film.

The quadrangular region located centrally of the cell 5 and not providedwith the insulating film 30 serves as a source contact hole 31. Upperportions of the trapezoids of the four trapezoidal source regions 24 areexposed to the interior of the source contact hole 31. Thus, the baseregion 22 and part of the source regions 24 are exposed into the sourcecontact hole 31.

On the main surface side of the semiconductor substrate 20 is formed asource electrode 35. In the source contact hole 31 the source electrode35 is connected electrically to the base region 22 and the sourceregions 24. On a back side (lower surface) of the semiconductorsubstrate 20 is formed a drain electrode 36, which is connectedelectrically to the N⁺ type semiconductor substrate 20.

Though not shown, an insulating film is formed also on the sourceelectrode 35, and the gate pad 3 and the source pad 4 both referred topreviously are provided on the portion where the insulating film is notformed.

The following is a brief description of a method for fabricating such aunit MOSFET (cell) 5. First there is provided a semiconductor substrate20 having an epitaxial layer 21 over a main surface thereof. Then, wellregions 23 are formed in order longitudinally and transversely over themain surface side of the semiconductor substrate 20.

Next, an insulating film and a polysilicon layer are formed stackedlyover the main surface of the semiconductor substrate 20. Thereafter, agate insulating film 27 and a gate electrode 28 are formed in mesh(lattice) shape by the conventional photolithography technique andetching technique. The areas free of the gate insulating film 27 and thegate electrode 28 are quadrangular areas, which are arranged side byside in both longitudinal and transverse directions.

Then, with the gate electrode 28 as a mask, an impurity is diffused toform base regions 22.

Further, using as masks the gate electrode 28 and a photoresist film(not shown) which is provided selectively, an impurity is diffused toform source regions 24. The length of channel 25 is determined dependingon the degree of diffusion in the source regions 24. In patterning thephotoresist film prior to formation of the source regions, there isformed a fine photoresist layer (mask) along each diagonal line of thequadrangle. As a result, there are formed trapezoidal source regions 24.

FIG. 3 is a schematic plan view showing a source contact hole 31, aquadrangular portion not provided with the gate electrode 28, and asingle source region 24. An upper side, or an inner end, of the sourceregions 24 as a trapezoidal region is exposed to the interior of thesource contact hole 31. A lower side, or an outer end, of the trapezoidis positioned between an end of the gate electrode 28 and an outerperiphery edge of the base region 22. Given that the width of the innerend of the source region is a, the width of the outer end of the sourceregion is c, and the width of the source region 24 running along an edgeof the source contact hole 31 (the width of the source region at an edgeof the source contact hole) is b, the width b is longer than the widtha, the width c is longer than the width a, and the width c is longerthan the width b. That is, there exists a relationship of the width c ofthe outer end of the source region>the width b of the source region at acontact hole edge>the width a of the inner end of the source region. Theheight of the trapezoid is d. As an example, a is 4 μm, b is 8 μm, c is18 μm, and d is 7 μm.

Next, an insulating film 30 is formed selectively over the main surfaceof the semiconductor substrate 20. At this time there are formedgate-source contact holes.

Subsequently, an aluminum layer is formed selectively, and a sourceelectrode 35 is formed by the aluminum layer filled into the sourcecontact hole, while gate wiring is formed by the aluminum layer filledinto the gate contact hole. The gate wiring is electrically connectedwith the gate electrode 28 formed on the bottom of the gate contacthole.

Then, though not shown, a passivation film (insulating film) is formedselectively and there are formed a gate pad 3 and a source pad 4.

Next, a drain electrode 36 is formed on a back side of the semiconductorsubstrate 20.

Lastly, the semiconductor substrate 20 is cut longitudinally andtransversely at predetermined positions to fabricate a larger number ofsemiconductor devices 1.

The following effects are obtained by this first embodiment.

(1) In each of the quartered, tapezoidal source regions 24, the width cof the outer end of the source region corresponding to the base of thetrapezoid is close to the gate electrode 28, while the width a of theinner end of the source region corresponding to the upper side of thetrapezoid is exposed to the interior of the source contact hole 31, andthus the source region is divergent in the flowing direction of draincurrent, so that the drain current flows smoothly and ON resistance canbe decreased. That is, the source region 24 has a pattern wherein thewidth b of the source region (the width of the source region at acontact hole edge) is longer than the width a of the inner end of thesource region, and the width c of the outer end of the source region islonger than the source region width b. Besides, the isolation spacingbetween adjacent source regions is as narrow as 0.3 to 0.4 μm.Therefore, the source region can be widened to a maximum extent and itis possible to decrease ON resistance.

FIG. 7 is a schematic sectional view schematically showing resistancecomponents of ON resistance in cell 5. Channel resistance R1 is presentin the channel 25 portion, surface resistance R2 is present in JFETportion 26, and spreading resistance (JFET resistance) R3 and driftresistance R4 are present in the depth direction of the JFET portion 26.

In this first embodiment, since leakage current is decreased withoutenlarging the channel length of MOSFET, the channel resistance R1 as acomponent of ON resistance is not made large, nor is narrowed the JFETportion 26, and hence the spreading resistance (JFET resistance) R3 doesnot become large, whereby it is possible to decrease ON resistance.

(2) Since there is adopted a structure wherein at each corner of thequadrangular cell the source region 24 is not extended to below the gateelectrode 28 (gate insulating film 27), the source region is not formedin the short channel portion at each cell corner, so that the channellength becomes larger practically and leakage current is diminished.

FIG. 8 is a graph showing a leakage current frequency distribution basedon the results of having measured about 10,000 semiconductor devices.The output of each semiconductor device is 450 mW and the number ofsquare cells is about 25,000.

In the conventional structure wherein a cell is centrally formed with aquadrangular source contact hole and a source region, which extendsalong the source contact hole, is in the shape of a quadrangular frame,leakage current peaks at 0.01 μA, in which the number of samples isabout 7400 pieces. Likewise, the number of samples is about 1800 piecesat a leakage current of 0.02 μA, about 400 pieces at 0.03 μA, and about100 at 0.04 μA. Leakage current occurs up to 0.05 to 0.08 μA althoughthe number of samples is smaller than 100 pieces.

On the other hand, in the structure using four independent trapezoidalsource regions according to the present invention, the peak of leakagecurrent is the same as in the conventional structure, i.e., 0.01 μA, butthe number of samples (frequency) at that peak is 6300 pieces and isthus smaller. About 1150 pieces and about 100 pieces appear at leakagecurrents of 0.02 μA and 0.03 μA, respectively, but at 0.04 μm and morethere is no leakage current.

Thus, according to the vertical high breakdown voltage MOSFET accordingto this first embodiment, not only it is possible to decrease the lossof power but also the breakage of device becomes difficult to occur.

According to experimental data, in the conventional 450V-proof MOSFETusing a quadrangular frame-like source region, a mean value of leakagecurrent is 137 nA, while in the power MOSFET of this first embodiment amean value of leakage current is 81 nA, which is about 59% of the abovemean value, corresponding approximately to a reduction by half.

(3) With the above effects (1) and (2) it is possible to provide avertical high breakdown voltage MOSFET which permits a decrease ofleakage current and which is small in power loss.

(4) Moreover, since leakage current is thus diminished, it is possibleto improve the manufacturing yield and provide a vertical high breakdownvoltage MOSFET of a high quality in a less expensive manner.

Second Embodiment

FIG. 9 is a schematic plan view showing a vertical power MOSFET portionaccording to a further embodiment (second embodiment) of the presentinvention and FIGS. 10(a) and 10(b) are sectional views taken alonglines A-A′ and B-B′ in FIG. 9.

In this second embodiment, in a unit MOSFET (cell) 5, a source region 24is formed as a quadrangular frame pattern extending along a sourcecontact hole 31, but at the corners of a quadrangular cell the impurityconcentration is not uniform and the channel length is short, so at thecorner portions the source region 24 is not provided. FIG. 10(b) is asectional view taken along line B-B′ in FIG. 9. In the same figure, thesource region 24 extends up to below a gate insulating film 27 and agate electrode 28 and a channel 25 is formed. FIG. 10(a) is a sectionalview taken along line A-A′ in FIG. 9, showing a portion corresponding toa corner of a quadrangular cell. As shown in the same figure, an outerend portion of the source region 24 is not positioned below the gateinsulating film 27 and the gate electrode 28, but is offset therefrom ata distance of h. Thus, like the previous first embodiment, there isadopted a structure wherein at each corner of the quadrangular cell thesource region 24 is not extended to below the gate electrode 28 (thegate insulating film 27). It follows that the source region is notformed at the short channel portion of each cell corner. Consequently,the channel length becomes longer practically and hence leakage currentis diminished.

Also in this second embodiment, as to the portion of the source region24 extending along each side of the source contact hole 31, there is atendency that the source region 24 has the same width size relation asin the first embodiment. More specifically, a study will now be madeabout the portion of the source region 24 which extends over inside andoutside of a left side of the source contact hole 31 in FIG. 9. Thelength b of the portion of the source region 24 extending along a leftside 31 a of the source contact hole 31 (the width b of the sourceregion at a contact hole edge) is larger than the width a of an innerend of the source region exposed to the interior of the source contacthole 31, and the width c of an outer end of the source region close tothe gate electrode 28 is longer than the width a of the inner end of thesource region. The widths a, b, and c are in the relationship of c>b>a.

By using the unit MOSFET (cell) 5 according to this second embodimentthere is obtained, in addition to the effects of the first embodiment,an effect that the resistance of contact with the source electrode 35can be made still smaller because there is adopted an integral structure(single pattern) wherein the source region 24 exposed to the interior ofthe source contact hole 31 is a continuous, quadrangular frame-likeregion.

Although the present invention has been described above concretely byway of embodiments thereof, it goes without saying that the presentinvention is not limited to the embodiments, but that various changesmay be made within the scope not departing from the gist of theinvention.

The following is a brief description of effects obtained by typicalmodes of the invention disclosed herein.

(1) It is possible to diminish ON resistance of a vertical, highbreakdown voltage MOSFET.

(2) It is possible to diminish leakage current of a vertical highbreakdown voltage MOSFET.

(3) In a vertical high breakdown voltage MOSFET, it is possible tosuppress power loss because leakage current and ON resistance can bediminished.

(4) Since leakage current is diminished, it is possible to fabricate avertical high breakdown voltage MOSFET of a high quality in a lessexpensive manner.

1-9. (canceled)
 10. A semiconductor device having a plurality ofpolygonal-shaped unit MOSFET cells connected in parallel disposed on amain surface of a semiconductor substrate, each of the polygonal-shapedunit MOSFET cell comprising: a gate insulating film formed on the mainsurface of the semiconductor substrate; a gate electrode formed on thegate insulating film: a drain region formed in the semiconductorsubstrate; a drain electrode formed o a back surface of thesemiconductor substrate, and electrically connected with the drainregion; a channel region formed over the drain region; and a pluralityof separated source regions formed over the channel region.
 11. Asemiconductor device according to claim 10, wherein the polygonal-shapedunit MOSFET cell has a quadrangle shape; and each polygonal-shaped unitMOSFET cell has four separated source regions.
 12. A semiconductordevice according to claim 11, wherein each of the source regions hastrapezoidal shape in a plan view.
 13. A semiconductor device accordingto claim 12, wherein the four source regions are separated by diagonalregions of the polygonal-shaped unit MOSFET cell.
 14. A semiconductordevice according to claim 10, further comprising: an insulating filmformed over the gate electrode and source regions; a contact hole formedin the insulating film, and exposing a part of each of the plurality ofsource regions; and a source electrode formed over the insulating film,wherein the plurality of source regions are electrically connected tothe source electrode via the contact hole.
 15. A semiconductor deviceaccording to claim 10, wherein the plurality of the source regions aresurrounded by the gate electrode in a plan view.
 16. A semiconductordevice according to claim 10, wherein the plurality of polygonal-shapedunit MOSFET cells comprise a power MOSFET.